CLUSTERING AND PHONON EFFECTS IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：10

作者：

HOLONYAK, N

LAIDIG, WD

CAMRAS, MD

MORKOC, H

DRUMMOND, TJ

HESS, K

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[3] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 40卷 / 01期

关键词：

D O I：

10.1016/0038-1098(81)90714-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：71 / 74

页数：4

共 24 条

[1]

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[3] INDUCED PHONON-SIDEBAND LASER OPERATION OF LARGE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURES LZ-200-500 A) [J].

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[6] 3 PERIOD (A1, GA) AS-GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIES [J].

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MORKOC, H .

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[7]

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[8] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].

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[9]

HESS K, 1979, SOLID STATE COMMUN, V30, P807, DOI 10.1016/0038-1098(79)90051-6

[10] ALLOY CLUSTERING IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].

HOLONYAK, N ;

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COLEMAN, JJ ;

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BARDEEN, J .

PHYSICAL REVIEW LETTERS, 1980, 45 (21) :1703-1706

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