INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY

被引：85

作者：

MORKOC, H ^{[1
]}

DRUMMOND, TJ ^{[1
]}

FISCHER, R ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1030 / 1033

页数：4

共 24 条

[1] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION
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[J]. ELECTRONICS LETTERS, 1981, 17 (10) : 342 - 344
[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
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STORMER, HL
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[3] EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
DRUMMOND, TJ
MORKOC, H
HESS, K
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5231 - 5234
[4] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
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CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
[5] INFLUENCE OF ALAS MOLE FRACTION ON THE ELECTRON-MOBILITY OF (AL,GA)AS/GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
FISCHER, R
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1028 - 1029
[6] 3 PERIOD (A1, GA) AS-GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIES
DRUMMOND, TJ
KOPP, W
MORKOC, H
[J]. ELECTRONICS LETTERS, 1981, 17 (13) : 442 - 444
[7] EFFECT OF BACKGROUND DOPING ON THE ELECTRON-MOBILITY OF (AL,GA)AS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
MORKOC, H
HESS, K
CHO, AY
STREETMAN, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5689 - 5690
[8] DRUMMOND TJ, 1982, J APPL PHYS, V53, pR30
[9] DRUMMOND TJ, UNPUB J CRYSTAL GROW
[10] THE EFFECT OF GROWTH TEMPERATURE ON THE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
HIYAMIZU, S
FUJII, T
MIMURA, T
NANBU, K
SAITO, J
HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : L455 - L458

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