INFLUENCE OF GROWTH-CONDITIONS ON TIN INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：37

作者：

ALEXANDRE, F

RAISIN, C

ABDALLA, MI

BRENAC, A

MASSON, JM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 08期

关键词：

D O I：

10.1063/1.328248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4296 / 4304

页数：9

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