ION-IMPLANTATION AND ANNEALING OF UNDOPED (AL,GA)AS/GAAS HETEROSTRUCTURES

[1] SATURATION OF SI ACTIVATION AT HIGH DOPING LEVELS IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (06) : 507 - 514

[2] Baratte H., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P444

[3] BARATTE H, UNPUB

[4] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5181 - 5191

[5] INITIAL DECOMPOSITION OF GAAS DURING RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 666 - 668

[6] RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 90 - 92

[7] HIRAMOTO T, 1985, JPN J APPL PHYS, V24, pL21

[8] HIRAMOTO T, 1985, JPN J APPL PHYS, V124, pL193

[9] KANBER H, 1985, J APPL PHYS, V57, P4782

[10] RELATIONSHIP BETWEEN SECONDARY DEFECTS AND ELECTRICAL ACTIVATION IN ION-IMPLANTED, RAPIDLY ANNEALED GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 38 - 40

[1] SATURATION OF SI ACTIVATION AT HIGH DOPING LEVELS IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (06) : 507 - 514

[2] Baratte H., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P444

[3] BARATTE H, UNPUB

[4] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5181 - 5191

[5] INITIAL DECOMPOSITION OF GAAS DURING RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 666 - 668

[6] RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 90 - 92

[7] HIRAMOTO T, 1985, JPN J APPL PHYS, V24, pL21

[8] HIRAMOTO T, 1985, JPN J APPL PHYS, V124, pL193

[9] KANBER H, 1985, J APPL PHYS, V57, P4782

[10] RELATIONSHIP BETWEEN SECONDARY DEFECTS AND ELECTRICAL ACTIVATION IN ION-IMPLANTED, RAPIDLY ANNEALED GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 38 - 40