DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &

[2] Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

[3] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[4] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 102 - 103

[5] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752

[6] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +

[7] Harris James, COMMUNICATION

[8] THE EFFECT OF STRESS ON THE REDISTRIBUTION OF IMPLANTED IMPURITIES IN GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2275 - 2279

[9] KASAHARA J, 1982, SEMIINSULATING 3 5 M, P115

[10] KOYAMA K, 1981, OCT EL SOC FALL M DE, P738

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &

[2] Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

[3] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[4] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 102 - 103

[5] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752

[6] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +

[7] Harris James, COMMUNICATION

[8] THE EFFECT OF STRESS ON THE REDISTRIBUTION OF IMPLANTED IMPURITIES IN GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2275 - 2279

[9] KASAHARA J, 1982, SEMIINSULATING 3 5 M, P115

[10] KOYAMA K, 1981, OCT EL SOC FALL M DE, P738