THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS

被引：138

作者：

CHAI, YG

WOOD, CEC

CHOW, R

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FAC SUBMICRON STRUCT,ITHACA,NY 14853

[2] CORNELL UNIV,DEPT ELECT ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 10期

关键词：

D O I：

10.1063/1.92562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：800 / 803

页数：4

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