EFFECT OF ACCELERATED-GROWTH RATE (1-5 MU-M-H) ON MOLECULAR-BEAM EPITAXIAL GAAS USING SI AS A DOPANT

被引：15

作者：

CHAI, YG

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来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 04期

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D O I：

10.1063/1.91950

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：379 / 382

页数：4

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