QUANTITATIVE-EVALUATION OF SUBSTRATE-TEMPERATURE DEPENDENCE OF GE INCORPORATION IN GAAS DURING MOLECULAR-BEAM EPITAXY

被引：31

作者：

KUNZEL, H

FISCHER, A

PLOOG, K

机构：

来源：

APPLIED PHYSICS | 1980年 / 22卷 / 01期

关键词：

D O I：

10.1007/BF00897927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：23 / 30

页数：8

共 21 条

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