DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL

被引:164
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GREINER, ME
GIBBONS, JF
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10.1063/1.94904
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O59 [应用物理学];
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页码:750 / 752
页数:3
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[3]  
KROGER FA, 1964, CHEM IMPERFECT CRYST, P275
[4]   STUDY OF ENCAPSULANTS FOR ANNEALING SI-IMPLANTED GAAS [J].
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