STUDY OF ENCAPSULANTS FOR ANNEALING SI-IMPLANTED GAAS

被引：41

作者：

ONUMA, T

HIRAO, T

SUGAWA, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 04期

关键词：

D O I：

10.1149/1.2123983

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：837 / 840

页数：4

共 17 条

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[8]

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[9] ANNEALING OF ION-IMPLANTED GAAS IN A CONTROLLED ATMOSPHERE [J].

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