COMPARISON OF GROUP-4 AND GROUP-6 DOPING BY IMPLANTATION IN GAAS

被引：23

作者：

DAVIES, DE ^{[1
]}

KENNEDY, JK ^{[1
]}

LUDINGTON, CE ^{[1
]}

机构：

[1] USAF,SYST COMMAND,RES LABS,BEDFORD,MA 01730

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 10期

关键词：

D O I：

10.1149/1.2134020

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1374 / 1377

页数：4

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