GAAS FETS WITH SILICON-IMPLANTED CHANNELS

被引:7
作者
KUNG, JK [1 ]
MALBON, RM [1 ]
LEE, DH [1 ]
机构
[1] HUGHES AIRCRAFT CO,TORRANCE RES CTR,TORRANCE,CA 90509
关键词
D O I
10.1049/el:19770137
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:187 / 188
页数:2
相关论文
共 3 条
  • [1] ION-IMPLANTED MICROWAVE FIELD-EFFECT TRANSISTORS IN GAAS
    HUNSPERGER, RG
    HIRSCH, N
    [J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 349 - 353
  • [2] ANNEALING OF ION-IMPLANTED GAAS IN A CONTROLLED ATMOSPHERE
    MALBON, RM
    LEE, DH
    WHELAN, JM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) : 1413 - 1415
  • [3] GAAS FIELD-EFFECT TRANSISTORS BY SELECTIVE SULFUR-ION IMPLANTATION
    MIZUTANI, T
    ISHIDA, S
    FUJIMOTO, M
    [J]. ELECTRONICS LETTERS, 1976, 12 (17) : 431 - 432