ANNEALING OF ION-IMPLANTED GAAS IN A CONTROLLED ATMOSPHERE

被引：41

作者：

MALBON, RM ^{[1
]}

LEE, DH ^{[1
]}

WHELAN, JM ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,CTR TORRANCE RES,TORRANCE,CA 90509

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 09期

关键词：

D O I：

10.1149/1.2133088

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1413 / 1415

页数：3

共 20 条

[1]

Bell E. C., 1974, Radiation Effects, V22, P253, DOI 10.1080/10420157408230802

[2] CW OPERATION OF ION-IMPLANTED GAAS READ-TYPE IMPATT DIODES [J].

BERENZ, JJ ;

YING, RS ;

LEE, DH .

ELECTRONICS LETTERS, 1974, 10 (09) :157-158

[3] COMPARISON OF GROUP-4 AND GROUP-6 DOPING BY IMPLANTATION IN GAAS [J].

DAVIES, DE ;

KENNEDY, JK ;

LUDINGTON, CE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1374-1377

[4] ROLE OF ELEVATED-TEMPERATURES IN IMPLANTATION OF GAAS [J].

DAVIES, DE ;

ROOSILD, S ;

LOWE, L .

SOLID-STATE ELECTRONICS, 1975, 18 (09) :733-736

[5]

EISEN F, 1974, 4TH P INT C ION IMPL

[6] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].

FOYT, AG ;

DONNELLY, JP ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1969, 14 (12) :372-&

[7] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

MAYER, JW ;

MITCHELL, IV ;

RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[8]

HEMMENT PLF, 1974, 4TH P INT C ION IMPL

[9]

HICKS HGB, 1970, 3RD P INT S GAAS REL, P92

[10] ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE [J].

HUNSPERG.RG ;

MARSH, OJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :488-&

← 1 2 →