SI ION-IMPLANTATION INTO GAAS

被引：10

作者：

NOZAKI, T ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,MIYAZAKI TAKATSU KU,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 10期

关键词：

D O I：

10.1143/JJAP.15.1951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1951 / 1959

页数：9

共 18 条

[1] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J].

BARON, R ;

SHIFRIN, GA ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[2] COMPARISON OF GROUP-4 AND GROUP-6 DOPING BY IMPLANTATION IN GAAS [J].

DAVIES, DE ;

KENNEDY, JK ;

LUDINGTON, CE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1374-1377

[3] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+

[4] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

DONNELLY, JP ;

LINDLEY, WT ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :41-43

[5] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

MAYER, JW ;

MITCHELL, IV ;

RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[6]

Harris J. S., 1971, ION IMPLANTATION SEM, P157

[7] ION-IMPLANTED MICROWAVE FIELD-EFFECT TRANSISTORS IN GAAS [J].

HUNSPERGER, RG ;

HIRSCH, N .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :349-353

[8] GAAS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS [J].

HUNSPERGER, RG ;

HIRSCH, N .

ELECTRONICS LETTERS, 1973, 9 (25) :577-578

[9] PHOTOLUMINESCENCE STUDY OF THERMAL CONVERSION IN GAAS GROWN FROM SILICA BOATS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5347-&

[10]

JOHNSON WS, 1969, PROJECTED RANGE STAT

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