THE EFFECT OF STRESS ON THE REDISTRIBUTION OF IMPLANTED IMPURITIES IN GAAS

被引:18
作者
KASAHARA, J
KATO, Y
ARAI, M
WATANABE, N
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D O I
10.1149/1.2119568
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2275 / 2279
页数:5
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