THE EFFECT OF STRESS ON THE REDISTRIBUTION OF IMPLANTED IMPURITIES IN GAAS

被引：18

作者：

KASAHARA, J

KATO, Y

ARAI, M

WATANABE, N

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 11期

关键词：

D O I：

10.1149/1.2119568

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2275 / 2279

页数：5

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共 29 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
DEAN, PJ
HURLE, DTJ
MULLIN, JB
WHITE, AM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053
[2] CASEY HC, 1975, POINT DEFECTS SOLIDS, V2, P169
[3] INFRARED-ABSORPTION OF THE 78-MEV ACCEPTOR IN GAAS
ELLIOTT, KR
HOLMES, DE
CHEN, RT
KIRKPATRICK, CG
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 898 - 901
[4] CR PROFILES IN SEMI-INSULATING GAAS AFTER ANNEALING WITH AND WITHOUT SIO2 ENCAPSULANTS IN A H2-AS4 ATMOSPHERE
EU, V
FENG, M
HENDERSON, WB
KIM, HB
WHELAN, JM
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 473 - 475
[5] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS
EVANS, CA
DELINE, VR
SIGMON, TW
LIDOW, A
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293
[6] GIBBONS JF, 1975, PROJECTED RANGE STAT
[7] GORYNOVA NA, 1965, CHEM DIAMOND LIKE SE, P236
[8] GRIFALCO LA, 1961, PHYS REV, V121, P982
[9] RESIDUAL-STRESS IN SILICON-NITRIDE FILMS
IRENE, EA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) : 287 - 298
[10] EFFECT OF INTERFACIAL STRESS AT THE SI-SIO2 INTERFACE ON THE DIFFUSION OF GA IN SI THROUGH SIO2
JAIN, GC
CHAKRAVARTY, BC
PRASAD, A
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (02): : 485 - 491