REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS

被引：59

作者：

EVANS, CA

DELINE, VR

SIGMON, TW

LIDOW, A

机构：

[1] INT RECTIFIER CORP,EL SEGUNDO,CA 90245

[2] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期

关键词：

D O I：

10.1063/1.91075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cr in-depth distributions have been measured in Se-ion-implanted GaAs as a function of postimplant annealing using secondary-ion mass spectrometry (SIMS). Analysis shows that Cr redistributes into regions of residual damage following 800°C annealing. As the damage anneals at higher temperatures, however, the Cr tends toward the GaAs surface. This phenomenon offers a plausible explanation of the discrepancies between the observed electrical and chemical distributions of ion-implanted Se.

引用

页码：291 / 293

页数：3

共 9 条

[1] BOZLER CO, 1976, APPL PHYS LETT, V11, P693
[2] HIGGINGS JA, 1976, ELECTRON LETT, V12, P962
[3] HIGGINS J, UNPUBLISHED
[4] HIGGINS JA, 1977, GAAS RELATED COMPOUN
[5] MULTILAYERED ENCAPSULATION OF GAAS
LIDOW, A
GIBBONS, JF
MAGEE, T
PENG, J
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) : 5213 - 5217
[6] FAST DIFFUSION OF ELEVATED-TEMPERATURE ION-IMPLANTED SE IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY
LIDOW, A
GIBBONS, JF
DELINE, VR
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 149 - 151
[7] ION-IMPLANTED SELENIUM PROFILES IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY
LIDOW, A
GIBBONS, JF
DELINE, VR
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 15 - 17
[8] ANOMALOUS MIGRATION OF FLUORINE AND ELECTRICAL ACTIVATION OF BORON IN BF-2+-IMPLANTED SILICON
TSAI, MY
STREETMAN, BG
WILLIAMS, P
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 144 - 147
[9] TSAI MY, UNPUBLISHED

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