ANOMALOUS MIGRATION OF FLUORINE AND ELECTRICAL ACTIVATION OF BORON IN BF-2+-IMPLANTED SILICON

被引：51

作者：

TSAI, MY

STREETMAN, BG

WILLIAMS, P

EVANS, CA

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,SCH CHEM SCI,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 03期

关键词：

D O I：

10.1063/1.89961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：144 / 147

页数：4

相关论文

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