VERSATILE DOUBLE AC HALL-EFFECT SYSTEM FOR PROFILING IMPURITIES IN SEMICONDUCTORS

[1] LOW-TEMPERATURE HALL MEASUREMENTS IN A CRYOSTAT WITH A BUILT-IN MAGNET [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1973, 6 (07): : 623 - 627

[2] COMAS J, 1977, ION IMPLANTATION SEM

[3] HIGH-DOSE IMPLANTATIONS OF P, AS, AND SB IN SILICON - A COMPARISON OF ROOM-TEMPERATURE IMPLANTATIONS FOLLOWED BY A 550 DEGREES C ANNEAL AND IMPLANTATIONS CONDUCTED AT 600 DEGREES C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : 363 - +

[4] DOUBLE AC METHOD FOR SENSITIVE MEASUREMENT OF HALL-EFFECT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (09) : 1335 - 1337

[5] APPARATUS FOR MEASURING HALL EFFECT OF LOW-MOBILITY SAMPLES AT HIGH TEMPERATURES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (11) : 1658 - +

[6] ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4073 - &

[7] ANODIC-OXIDATION OF GAAS AS A TECHNIQUE TO EVALUATE ELECTRICAL CARRIER CONCENTRATION PROFILES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 651 - 655

[8] A NEW METHOD FOR THE MEASUREMENT OF HALL COEFFICIENTS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1950, 21 (12) : 1028 - 1029

[9] Thonsen P.V., 1963, KGL DAN SELSK MAT FY, V33, P1

[10] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[1] LOW-TEMPERATURE HALL MEASUREMENTS IN A CRYOSTAT WITH A BUILT-IN MAGNET [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1973, 6 (07): : 623 - 627

[2] COMAS J, 1977, ION IMPLANTATION SEM

[3] HIGH-DOSE IMPLANTATIONS OF P, AS, AND SB IN SILICON - A COMPARISON OF ROOM-TEMPERATURE IMPLANTATIONS FOLLOWED BY A 550 DEGREES C ANNEAL AND IMPLANTATIONS CONDUCTED AT 600 DEGREES C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : 363 - +

[4] DOUBLE AC METHOD FOR SENSITIVE MEASUREMENT OF HALL-EFFECT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (09) : 1335 - 1337

[5] APPARATUS FOR MEASURING HALL EFFECT OF LOW-MOBILITY SAMPLES AT HIGH TEMPERATURES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (11) : 1658 - +

[6] ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4073 - &

[7] ANODIC-OXIDATION OF GAAS AS A TECHNIQUE TO EVALUATE ELECTRICAL CARRIER CONCENTRATION PROFILES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 651 - 655

[8] A NEW METHOD FOR THE MEASUREMENT OF HALL COEFFICIENTS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1950, 21 (12) : 1028 - 1029

[9] Thonsen P.V., 1963, KGL DAN SELSK MAT FY, V33, P1

[10] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1