ANODIC-OXIDATION OF GAAS AS A TECHNIQUE TO EVALUATE ELECTRICAL CARRIER CONCENTRATION PROFILES

[1] CHU WH, TO BE PUBLISHED

[2] ELLIPSOMETRY OF ANODIC OXIDE FILMS ON GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 89 - &

[3] ELECTRODE REACTIONS AND MECHANISM OF SILICON ANODIZATION IN N-METHYLACETAMIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (09) : 1042 - 1046

[4] COMBINED USE OF HE BACKSCATTERING AND HE-INDUCED X-RAYS IN STUDY OF ANODICALLY GROWN OXIDE-FILMS ON GAAS [J]. THIN SOLID FILMS, 1973, 19 (01) : 81 - 89

[5] PASSIVITY OF GALLIUM ARSENIDE [J]. ELECTROCHIMICA ACTA, 1971, 16 (11) : 2017 - &

[6] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[7] JOHNSON WS, 1969, PROJECTED RANGE STAT

[8] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1385 - 1390

[9] Mayer J. W., 1970, ION IMPLANTATION SEM

[10] MULLER H, 1974, 4 P INT C ION IMPL O

[1] CHU WH, TO BE PUBLISHED

[2] ELLIPSOMETRY OF ANODIC OXIDE FILMS ON GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 89 - &

[3] ELECTRODE REACTIONS AND MECHANISM OF SILICON ANODIZATION IN N-METHYLACETAMIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (09) : 1042 - 1046

[4] COMBINED USE OF HE BACKSCATTERING AND HE-INDUCED X-RAYS IN STUDY OF ANODICALLY GROWN OXIDE-FILMS ON GAAS [J]. THIN SOLID FILMS, 1973, 19 (01) : 81 - 89

[5] PASSIVITY OF GALLIUM ARSENIDE [J]. ELECTROCHIMICA ACTA, 1971, 16 (11) : 2017 - &

[6] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[7] JOHNSON WS, 1969, PROJECTED RANGE STAT

[8] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1385 - 1390

[9] Mayer J. W., 1970, ION IMPLANTATION SEM

[10] MULLER H, 1974, 4 P INT C ION IMPL O