FAST DIFFUSION OF ELEVATED-TEMPERATURE ION-IMPLANTED SE IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY

被引：20

作者：

LIDOW, A

GIBBONS, JF

DELINE, VR

EVANS, CA

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,SCH CHEM SCI,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 03期

关键词：

D O I：

10.1063/1.89963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：149 / 151

页数：3

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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (12) : 1926 - 1930
[3] DEPTH PROFILE DETECTION LIMIT OF 3X10(15) ATOM CM-3 FOR AS IN SI USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY
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[4] EVALUATION OF A CESIUM PRIMARY ION-SOURCE ON AN ION MICROPROBE MASS-SPECTROMETER
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