EFFECTS OF IMPLANTATION TEMPERATURE ON LATTICE LOCATION OF TELLURIUM IMPLANTED IN GALLIUM-ARSENIDE

被引：21

作者：

TAKAI, M ^{[1
]}

GAMO, K ^{[1
]}

MASUDA, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,TOYONAKA,OSAKA,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.12.1926

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1926 / 1930

页数：5

共 12 条

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BELL, EC
HEMMENT, PLF
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[3] EISEN FH, 1972, ATOMIC COLLISIONS SO, V4
[4] GAMO K, 1973, OYO BUTURI S, V42, P130
[5] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS
HARRIS, JS
MAYER, JW
EISEN, FH
HASKELL, JD
WELCH, B
PASHLEY, RD
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &
[6] LINDHARD J, 1965, DANSKE VIDENSKAB MFM, V34
[7] Mayer J. W., 1970, ION IMPLANTATION SEM
[8] LATTICE LOCATION BY CHANNELING ANGULAR-DISTRIBUTIONS - BI IMPLANTED IN SI
PICRAUX, ST
GIBSON, WM
BROWN, WL
[J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1382 - &
[9] EFFECT OF ION-IMPLANTATION DAMAGE ON OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDE
SHIFRIN, GA
HUNSPERGER, RG
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 274 - +
[10] CRITICAL ANGLES OF SB AND BI IMPLANTED SI
SIGURD, D
DOMEIJ, B
[J]. PHYSICS LETTERS A, 1971, A 36 (02) : 81 - &