CRITICAL ANGLES OF SB AND BI IMPLANTED SI

[1] Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561

[2] Bjorkqvist K., 1970, Radiation Effects, V6, P141, DOI 10.1080/00337577008235057

[3] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[4] Domeij B., 1970, Radiation Effects, V6, P155, DOI 10.1080/00337577008235059

[5] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[6] LINDHARD J, 1965, MAY FYS MEDD DAN VID, V34

[7] Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31

[8] ENHANCED DIFFUSION AND OUT-DIFFUSION IN ION-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4166 - &

[1] Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561

[2] Bjorkqvist K., 1970, Radiation Effects, V6, P141, DOI 10.1080/00337577008235057

[3] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[4] Domeij B., 1970, Radiation Effects, V6, P155, DOI 10.1080/00337577008235059

[5] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[6] LINDHARD J, 1965, MAY FYS MEDD DAN VID, V34

[7] Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31

[8] ENHANCED DIFFUSION AND OUT-DIFFUSION IN ION-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4166 - &