EFFECT OF INTERFACIAL STRESS AT THE SI-SIO2 INTERFACE ON THE DIFFUSION OF GA IN SI THROUGH SIO2

被引：4

作者：

JAIN, GC

CHAKRAVARTY, BC

PRASAD, A

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 64卷 / 02期

关键词：

D O I：

10.1002/pssa.2210640210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：485 / 491

页数：7

共 13 条

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[5] Girifalco L.A., 1967, POINT DEFECTS DIFFUS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) : 89 - 92
[8] JAIN GC, 1978, INDIAN J PURE AP PHY, V16, P571
[9] DIFFUSION OF GA INTO SI THROUGH SIO2
JAIN, GC
PRASAD, A
CHAKRAVARTY, BC
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 46 (02): : K151 - K155
[10] PHYSICAL AND MATHEMATICAL APPROACH TO MASS-TRANSPORT IN CAPSULE DIFFUSION PROCESSES
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