MECHANISM OF THE ANODIC-OXIDATION OF SI AT CONSTANT VOLTAGE

A study has been made on the constant voltage anodic oxidation of Si in a forming solution of ethylene glycol + 0.04(N) KiNO3. The thickness of the oxide formed is found to vary linearly with impressed voltage having the slope 6.5 A V-1. At a fixed voltage the current decays exponentially with a linear tail and the growth of the oxide thickness follows a parabolic law. The growth rate yields the value of the ionic current. The ratio of the ionic and the total. current, called the ionic current efficiency, n, tends to decrease with time up to a field ~20 MV cm-1. The average value of 11 is 3.1 X 10-2 at 300V and 2.6 X 10-2 at 250V. © 1979, The Electrochemical Society, Inc. All rights reserved.