DIFFUSIVITY SUMMARY OF B, GA, P, AS, AND SB IN SIO2

被引：69

作者：

GHEZZO, M ^{[1
]}

BROWN, DM ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 01期

关键词：

D O I：

10.1149/1.2403391

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：146 / 148

页数：3

共 21 条

[1] EFFECT OF OXIDE LAYERS ON THE DIFFUSION OF PHOSPHORUS INTO SILICON
ALLEN, RB
BERNSTEIN, H
KURTZ, AD
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 334 - 337
[2] THE DIFFUSIVITY OF ARSENIC IN SILICON
ARMSTRONG, WJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1065 - 1067
[3] DOPED OXIDES AS DIFFUSION SOURCES .2. PHOSPHORUS INTO SILICON
BARRY, ML
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1405 - &
[4] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON
BARRY, ML
OLOFSEN, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 854 - &
[5] GLASS SOURCE B DIFFUSION IN SI AND SIO2
BROWN, DM
KENNICOTT, PR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 293 - +
[6] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON
FROSCH, CJ
DERICK, L
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) : 547 - 552
[7] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
FULLER, CS
DITZENBERGER, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553
[8] ARSENIC GLASS SOURCE DIFFUSION IN SI AND SIO2
GHEZZO, M
BROWN, DM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 110 - 116
[9] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &
[10] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER
GROVE, AS
LEISTIKO, O
SAH, CT
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (09) : 985 - &

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