THE DIFFUSIVITY OF ARSENIC IN SILICON

[1] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) : 547 - 552

[2] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[3] IRVIN JC, 1962, BELL SYST TECHNOL J, P387

[4] NOWICK AS, 1951, J APPL PHYS, V22, P1182, DOI 10.1063/1.1700130

[5] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 205 - 233

[6] THEORY OF DO FOR ATOMIC DIFFUSION IN METALS [J]. JOURNAL OF APPLIED PHYSICS, 1951, 22 (04) : 372 - 375

[1] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) : 547 - 552

[2] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[3] IRVIN JC, 1962, BELL SYST TECHNOL J, P387

[4] NOWICK AS, 1951, J APPL PHYS, V22, P1182, DOI 10.1063/1.1700130

[5] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 205 - 233

[6] THEORY OF DO FOR ATOMIC DIFFUSION IN METALS [J]. JOURNAL OF APPLIED PHYSICS, 1951, 22 (04) : 372 - 375