ARSENIC GLASS SOURCE DIFFUSION IN SI AND SIO2

The diffusion properties of As in si and SiO//2 using As//2O//3-SiO//2 chemical-vapor deposited glass-diffusion sources made from the oxidation of SiH//4 and AsH//3 are examined. Data on the glass-deposition rate, which decreases rapidly when the molar percentage of AsH//3 in the reactive mixture is greater than 10%, etch rates in buffered HF, and As diffusion data in O//2 and Ar ambients are presented. The As concentration where the glass becomes damaged during diffusion at 1100 degrees C is also examined.