DIFFUSION MODEL FOR ARSENIC IN SILICON

被引：43

作者：

CHIU, TL

GHOSH, HN

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1971年 / 15卷 / 06期

关键词：

D O I：

10.1147/rd.156.0472

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：472 / &

共 12 条

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[3]

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MAITA, JP .

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[8] CONDUCTIVITY AND HALL EFFECT IN THE INTRINSIC RANGE OF GERMANIUM [J].

MORIN, FJ ;

MAITA, JP .

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[9] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR [J].

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[10] FORMATION OF JUNCTION STRUCTURES BY SOLID-STATE DIFFUSION [J].

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