DOPED OXIDES AS DIFFUSION SOURCES .2. PHOSPHORUS INTO SILICON

被引：40

作者：

BARRY, ML

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 11期

关键词：

D O I：

10.1149/1.2407332

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1405 / &

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