PHYSICAL AND MATHEMATICAL APPROACH TO MASS-TRANSPORT IN CAPSULE DIFFUSION PROCESSES

被引：2

作者：

KOSTKA, A ^{[1
]}

GERETH, R ^{[1
]}

KREUZER, K ^{[1
]}

机构：

[1] AEG TELEFUNKEN,SEMICOND DIV,HEILBRONN,WEST GERMANY

来源：

关键词：

D O I：

10.1149/1.2403609

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：971 / 974

页数：4

共 7 条

[1] ARMSTRONG WJ, 1966, ELECTROCHEM TECHNOL, V4, P475
[2] DIFFUSION OF IMPURITIES INTO EVAPORATING SILICON
BATDORF, RL
SMITS, FM
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) : 259 - 264
[3] DAHLBERG R, 1969, SEMICONDUCTOR SILICO
[4] FRANK P, 1961, DIFFERENTIALGLEICH 2
[5] SOLID-SOLID VACUUM DIFFUSION PROCESSES IN SILICON
GERETH, R
KOSTKA, A
KREUZER, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) : 966 - 971
[6] HONIG RE, 1962, RCA REV, V23, P567
[7] KNOPP AN, 1963, J ELECTROCHEM SOC, V110, P82