THE EFFECT OF STRESS ON THE REDISTRIBUTION OF IMPLANTED IMPURITIES IN GAAS

被引：18

作者：

KASAHARA, J

KATO, Y

ARAI, M

WATANABE, N

机构：

来源：

关键词：

D O I：

10.1149/1.2119568

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2275 / 2279

页数：5

共 29 条

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