REDISTRUBUTION OF ZN IMPLANTED INTO GAAS

[1] BENSON RB, 1976, ION IMPLANTATION SEM, P131

[2] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293

[3] GIBBONS JF, 1975, PROJECTED RANGE STAT

[4] KASAHARA J, 1981, APPL PHYS LETT, V38, P798, DOI 10.1063/1.92135

[5] KENDALL DL, 1968, SEMICONDUCT SEMIMET, V4, P194

[6] ANNEALING OF DAMAGE AND REDISTRIBUTION OF CR IN BORON-IMPLANTED SI3N4-CAPPED GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 447 - 449

[7] DAMAGE GETTERING OF CR DURING THE ANNEALING OF CR AND S IMPLANTS IN SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 308 - 310

[8] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 837 - 840

[1] BENSON RB, 1976, ION IMPLANTATION SEM, P131

[2] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293

[3] GIBBONS JF, 1975, PROJECTED RANGE STAT

[4] KASAHARA J, 1981, APPL PHYS LETT, V38, P798, DOI 10.1063/1.92135

[5] KENDALL DL, 1968, SEMICONDUCT SEMIMET, V4, P194

[6] ANNEALING OF DAMAGE AND REDISTRIBUTION OF CR IN BORON-IMPLANTED SI3N4-CAPPED GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 447 - 449

[7] DAMAGE GETTERING OF CR DURING THE ANNEALING OF CR AND S IMPLANTS IN SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 308 - 310

[8] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 837 - 840