CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE

被引：46

作者：

VASUDEV, PK ^{[1
]}

WILSON, RG ^{[1
]}

EVANS, CA ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 10期

关键词：

D O I：

10.1063/1.91342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：837 / 840

页数：4

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