PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS

被引：283

作者：

CHIANG, SY ^{[1
]}

PEARSON, GL ^{[1
]}

机构：

[1] STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 07期

关键词：

D O I：

10.1063/1.321985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2986 / 2991

页数：6

共 20 条

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