FORMATION OF CONDUCTIVE LAYER NEAR-SURFACE OF SEMI-INSULTING GAAS COVERED WITH OXIDE FILM

被引：19

作者：

SATO, Y ^{[1
]}

机构：

[1] NIPPON TELEGR & TEL PUBL CORP,MUSASHINO ELECTR COMMUN LAB,MUSASHINO,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 02期

关键词：

D O I：

10.1143/JJAP.12.242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：242 / 251

页数：10

相关论文

共 14 条

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE
ANTELL, GR
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &
[2] CRONIN GR, 1963, J ELECTROCHEM SOC, V110, pC265
[3] HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
DRANGEID, KE
SOMMERHALDER, R
WALTER, W
[J]. ELECTRONICS LETTERS, 1970, 6 (08) : 228 - +
[4] FUJIMOTO M, 1969, 1 P C SOL STAT DEV T, P139
[5] TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
ISHIBASHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) : 503 - +
[6] DIFFUSION OF PHOSPHORUS IN SILICON OXIDE FILM
SAH, CT
SELLO, H
TREMERE, DA
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 288 - 298
[7] PROPERTIES OF INTERFACE BETWEEN GALLIUM ARSENIDE AND SILICON OXIDES
SATO, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (06) : 595 - &
[8] SEKI H, 1971, ECL TECH J, V20, P1829
[9] SELWAY PR, 1968, BRIT J APPL PHYS, V1, P25
[10] STATZ HF, 1971, Patent No. 462705