PROPERTIES OF INTERFACE BETWEEN GALLIUM ARSENIDE AND SILICON OXIDES

被引：13

作者：

SATO, Y

机构：

来源：

关键词：

D O I：

10.1143/JJAP.7.595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：595 / &

共 8 条

[1] GOBELI GW, 1965, PHYS REV, VA137, P245
[2] SURFACE CAPACITY OF OXIDE COATED SEMICONDUCTORS
HALL, R
WHITE, JP
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 211 - &
[3] A DIFFUSION MASK FOR GERMANIUM
JORDAN, EL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (05) : 478 - 481
[4] SEMICONDUCTOR SURFACE VARACTOR
LINDNER, R
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03): : 803 - +
[5] MACRAE AU, 1965, B AM PHYS SOC, V10, P68
[6] RIVIERE JC, 1957, P PHYS SOC, VB 70, P676
[7] ION TRANSPORT PHENOMENA IN INSULATING FILMS
SNOW, EH
GROVE, AS
DEAL, BE
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &
[8] GALLIUM ARSENIDE PLANAR TECHNOLOGY
VONMUNCH, W
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (06) : 438 - +