GALLIUM ARSENIDE PLANAR TECHNOLOGY

被引：8

作者：

VONMUNCH, W

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1966年 / 10卷 / 06期

关键词：

D O I：

10.1147/rd.106.0438

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：438 / +

页数：1

共 21 条

[1] DOUBLE DIFFUSED GALLIUM ARSENIDE TRANSISTORS [J].

BECKE, H ;

FLATLEY, D ;

STOLNITZ, D .

SOLID-STATE ELECTRONICS, 1965, 8 (03) :255-&

[2]

BERGER H, UNPUBLISHED DATA

[3]

BLAKESLEE AE, TO BE PUBLISHED

[4] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J].

CUNNELL, FA ;

GOOCH, CH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :127-133

[5] THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE [J].

FANE, RW ;

GOSS, AJ .

SOLID-STATE ELECTRONICS, 1963, 6 (04) :383-387

[6]

FLATLEY D, 1964, MAY EL SOC M

[7]

GANSAUGE P, UNPUBLISHED DATA

[8]

JORDAN E, 1961, J ELECTROCHEM SOC, V21, P318

[9] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].

KNIGHT, JR ;

EFFER, D ;

EVANS, PR .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&

[10] EPITAXIAL GROWTH OF GAAS THROUGH CRACKS IN SIO2 MASKS [J].

MICHELITSCH, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (07) :747-+

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