DOUBLE DIFFUSED GALLIUM ARSENIDE TRANSISTORS

被引：18

作者：

BECKE, H

FLATLEY, D

STOLNITZ, D

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(65)90141-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：255 / &

共 15 条

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[4]

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[5]

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[6]

HENNEKE HL, 1963, PTGED C HIGH TEMPERA

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[9]

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[10] A DIFFUSION MASK FOR GERMANIUM [J].

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