SURFACE CAPACITY OF OXIDE COATED SEMICONDUCTORS

被引:19
作者
HALL, R
WHITE, JP
机构
关键词
D O I
10.1016/0038-1101(65)90138-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:211 / &
相关论文
共 13 条
[1]  
BECKE H, 1964, AF3365711402
[2]  
DELORD JF, 1963, ELECTRON DEVICE M WA
[3]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[4]   THEORY OF THIN FILM TRANSISTOR OPERATION [J].
HAERING, RR .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :31-38
[5]   SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].
HOFSTEIN, SR ;
HEIMAN, FP .
PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1190-&
[6]  
HOFSTEIN SR, 1964, P I ELECT ELECTRON E
[7]  
IHANTOLA HRJ, 1961, 16611 STANF RES TECH
[8]   A DIFFUSION MASK FOR GERMANIUM [J].
JORDAN, EL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (05) :478-481
[9]   IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J].
LEHOVEC, K ;
SLOBODSKOY, A .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :59-79
[10]   SEMICONDUCTOR SURFACE VARACTOR [J].
LINDNER, R .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03) :803-+