ANNEALING OF DAMAGE AND REDISTRIBUTION OF CR IN BORON-IMPLANTED SI3N4-CAPPED GAAS

被引：15

作者：

MAGEE, TJ ^{[1
]}

LEE, KS ^{[1
]}

ORMOND, R ^{[1
]}

BLATTNER, RJ ^{[1
]}

EVANS, CA ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 05期

关键词：

D O I：

10.1063/1.91734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：447 / 449

页数：3

共 7 条

[1]

Asbeck P. M., 1980, IEEE Electron Device Letters, VEDL-1, P35, DOI 10.1109/EDL.1980.25221

[2] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J].

EVANS, CA ;

DELINE, VR ;

SIGMON, TW ;

LIDOW, A .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :291-293

[3] IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS [J].

FAVENNEC, PN ;

HARIDON, HL .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :699-701

[4] INCORPORATION OF BORON DURING THE GROWTH OF GAAS SINGLE-CRYSTALS [J].

HOPKINS, CG ;

DELINE, VR ;

BLATTNER, RJ ;

EVANS, CA ;

MAGEE, TJ .

APPLIED PHYSICS LETTERS, 1980, 36 (12) :989-990

[5]

HUBER AM, 1979, APPL PHYS LETT, V34, P859

[6]

MAGEE TJ, UNPUBLISHED

[7] CHROMIUM CONCENTRATIONS, DEPTH DISTRIBUTIONS, AND DIFFUSION-COEFFICIENT IN BULK AND EPITAXIAL GAAS AND IN SI [J].

WILSON, RG ;

VASUDEV, PK ;

JAMBA, DM ;

EVANS, CA ;

DELINE, VR .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :215-217

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