IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS

被引：25

作者：

FAVENNEC, PN

HARIDON, HL

机构：

[1] Centre National d'Etudes des Télécommunications

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期

关键词：

D O I：

10.1063/1.91259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zinc and selenium implantations have been performed in Cr-doped semi-insulating GaAs. We show that all zinc and selenium implanted impurities are electrically active after annealing at 900°C. But, in addition to the implantation distribution, there is a distribution induced by the chromium outdiffusion during annealing leading to a Cr-depleted zone, which can become conductive. By taking into account these distributions, the electrical measurements may be explained.

引用

页码：699 / 701

页数：3

共 8 条

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FAVENNEC, PN
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