DAMAGE GETTERING OF CR DURING THE ANNEALING OF CR AND S IMPLANTS IN SEMI-INSULATING GAAS

被引：21

作者：

VASUDEV, PK ^{[1
]}

WILSON, RG ^{[1
]}

EVANS, CA ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOC,SAN MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 03期

关键词：

D O I：

10.1063/1.91916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：308 / 310

页数：3

相关论文

共 11 条

[1] LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES
DONNELLY, JP
BOZLER, CO
LINDLEY, WT
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 273 - 276
[2] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS
EVANS, CA
DELINE, VR
SIGMON, TW
LIDOW, A
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293
[3] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[4] THERMALLY CONVERTED SURFACE-LAYERS IN SEMI-INSULATING GAAS
LUM, WY
WIEDER, HH
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 213 - 215
[5] THERMAL-CONVERSION MECHANISM IN SEMI-INSULATING GAAS
OHNO, H
USHIROKAWA, A
KATODA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8226 - 8228
[6] TEM STRUCTURAL STUDIES ON SE+ IMPLANTED GAAS
SADANA, DK
BOOKER, GR
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (1-2): : 35 - 43
[7] MEASUREMENTS OF THE HIGH-TEMPERATURE ELECTRICAL RESISTANCE OF ALUMINUM - RESISTIVITY OF LATTICE VACANCIES
SIMMONS, RO
BALLUFFI, RW
[J]. PHYSICAL REVIEW, 1960, 117 (01): : 62 - 68
[8] SWALIN RA, 1958, J APPL PHYS, V29, P679
[9] ANOMALOUS MIGRATION OF FLUORINE AND ELECTRICAL ACTIVATION OF BORON IN BF-2+-IMPLANTED SILICON
TSAI, MY
STREETMAN, BG
WILLIAMS, P
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 144 - 147
[10] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE
VASUDEV, PK
WILSON, RG
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 837 - 840