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REDISTRIBUTION OF MANGANESE AFTER ANNEALING OF GAAS IMPLANTED WITH SI+ AND SE+
被引:21
作者
:
KANBER, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
KANBER, H
[
1
]
FENG, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
FENG, M
[
1
]
WHELAN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
WHELAN, JM
[
1
]
机构
:
[1]
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
来源
:
APPLIED PHYSICS LETTERS
|
1982年
/ 40卷
/ 11期
关键词
:
D O I
:
10.1063/1.92967
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:960 / 962
页数:3
相关论文
共 24 条
[1]
THERMAL ACTIVATION-ENERGY OF MANGANESE ACCEPTORS IN GALLIUM-ARSENIDE AS A FUNCTION OF IMPURITY SPACING
BLAKEMORE, JS
论文数:
0
引用数:
0
h-index:
0
机构:
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
BLAKEMORE, JS
BROWN, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
BROWN, WJ
STASS, ML
论文数:
0
引用数:
0
h-index:
0
机构:
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
STASS, ML
WOODBURY, DA
论文数:
0
引用数:
0
h-index:
0
机构:
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
WOODBURY, DA
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(07)
: 3352
-
3354
[2]
STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS
CHRISTEL, LA
论文数:
0
引用数:
0
h-index:
0
CHRISTEL, LA
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(08)
: 5050
-
5055
[3]
DISTRIBUTION OF IMPURITIES IN SEMI-INSULATING GAAS AFTER HEAT-TREATMENT IN HYDROGEN
CLEGG, JB
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
CLEGG, JB
SCOTT, GB
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
SCOTT, GB
HALLAIS, J
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
HALLAIS, J
MIRCEAROUSSEL, A
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
MIRCEAROUSSEL, A
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(02)
: 1110
-
1112
[4]
CR PROFILES IN SEMI-INSULATING GAAS AFTER ANNEALING WITH AND WITHOUT SIO2 ENCAPSULANTS IN A H2-AS4 ATMOSPHERE
EU, V
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
EU, V
FENG, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
FENG, M
HENDERSON, WB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
HENDERSON, WB
KIM, HB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
KIM, HB
WHELAN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
WHELAN, JM
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(05)
: 473
-
475
[5]
STUDY OF ELECTRICAL AND CHEMICAL PROFILES OF SI IMPLANTED IN SEMI-INSULATING GAAS SUBSTRATE ANNEALED UNDER SIO2 AND CAPLESS
FENG, M
论文数:
0
引用数:
0
h-index:
0
FENG, M
KWOK, SP
论文数:
0
引用数:
0
h-index:
0
KWOK, SP
EU, V
论文数:
0
引用数:
0
h-index:
0
EU, V
HENDERSON, BW
论文数:
0
引用数:
0
h-index:
0
HENDERSON, BW
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(04)
: 2990
-
2993
[6]
STUDY OF CR, SI AND MN DISTRIBUTION IN SEMI-INSULATING GAAS AFTER ANNEALING WITH AND WITHOUT SIO2 IN AN H2-AS4 ATMOSPHERE
FENG, M
论文数:
0
引用数:
0
h-index:
0
FENG, M
EU, V
论文数:
0
引用数:
0
h-index:
0
EU, V
KANBER, H
论文数:
0
引用数:
0
h-index:
0
KANBER, H
HENDERSON, WB
论文数:
0
引用数:
0
h-index:
0
HENDERSON, WB
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1981,
10
(06)
: 973
-
986
[7]
HALLAIS J, 1977, I PHYS C SER B, V33, P220
[8]
HALLAIS J, 1976, GALLIUM ARSENIDE REL
[9]
HUBER AM, 1981, I PHYS C SER, V56, P579
[10]
HUBER AM, 1980, GALLIUM ARSENIDE REL
←
1
2
3
→
共 24 条
[1]
THERMAL ACTIVATION-ENERGY OF MANGANESE ACCEPTORS IN GALLIUM-ARSENIDE AS A FUNCTION OF IMPURITY SPACING
BLAKEMORE, JS
论文数:
0
引用数:
0
h-index:
0
机构:
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
BLAKEMORE, JS
BROWN, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
BROWN, WJ
STASS, ML
论文数:
0
引用数:
0
h-index:
0
机构:
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
STASS, ML
WOODBURY, DA
论文数:
0
引用数:
0
h-index:
0
机构:
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA
WOODBURY, DA
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(07)
: 3352
-
3354
[2]
STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS
CHRISTEL, LA
论文数:
0
引用数:
0
h-index:
0
CHRISTEL, LA
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(08)
: 5050
-
5055
[3]
DISTRIBUTION OF IMPURITIES IN SEMI-INSULATING GAAS AFTER HEAT-TREATMENT IN HYDROGEN
CLEGG, JB
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
CLEGG, JB
SCOTT, GB
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
SCOTT, GB
HALLAIS, J
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
HALLAIS, J
MIRCEAROUSSEL, A
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
MIRCEAROUSSEL, A
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(02)
: 1110
-
1112
[4]
CR PROFILES IN SEMI-INSULATING GAAS AFTER ANNEALING WITH AND WITHOUT SIO2 ENCAPSULANTS IN A H2-AS4 ATMOSPHERE
EU, V
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
EU, V
FENG, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
FENG, M
HENDERSON, WB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
HENDERSON, WB
KIM, HB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
KIM, HB
WHELAN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
WHELAN, JM
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(05)
: 473
-
475
[5]
STUDY OF ELECTRICAL AND CHEMICAL PROFILES OF SI IMPLANTED IN SEMI-INSULATING GAAS SUBSTRATE ANNEALED UNDER SIO2 AND CAPLESS
FENG, M
论文数:
0
引用数:
0
h-index:
0
FENG, M
KWOK, SP
论文数:
0
引用数:
0
h-index:
0
KWOK, SP
EU, V
论文数:
0
引用数:
0
h-index:
0
EU, V
HENDERSON, BW
论文数:
0
引用数:
0
h-index:
0
HENDERSON, BW
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(04)
: 2990
-
2993
[6]
STUDY OF CR, SI AND MN DISTRIBUTION IN SEMI-INSULATING GAAS AFTER ANNEALING WITH AND WITHOUT SIO2 IN AN H2-AS4 ATMOSPHERE
FENG, M
论文数:
0
引用数:
0
h-index:
0
FENG, M
EU, V
论文数:
0
引用数:
0
h-index:
0
EU, V
KANBER, H
论文数:
0
引用数:
0
h-index:
0
KANBER, H
HENDERSON, WB
论文数:
0
引用数:
0
h-index:
0
HENDERSON, WB
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1981,
10
(06)
: 973
-
986
[7]
HALLAIS J, 1977, I PHYS C SER B, V33, P220
[8]
HALLAIS J, 1976, GALLIUM ARSENIDE REL
[9]
HUBER AM, 1981, I PHYS C SER, V56, P579
[10]
HUBER AM, 1980, GALLIUM ARSENIDE REL
←
1
2
3
→