STUDY OF CR, SI AND MN DISTRIBUTION IN SEMI-INSULATING GAAS AFTER ANNEALING WITH AND WITHOUT SIO2 IN AN H2-AS4 ATMOSPHERE

被引：12

作者：

FENG, M

EU, V

KANBER, H

HENDERSON, WB

机构：

来源：

关键词：

D O I：

10.1007/BF02661187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：973 / 986

页数：14

共 15 条

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HENDERSON, WB
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 473 - 475
[3] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS
EVANS, CA
DELINE, VR
SIGMON, TW
LIDOW, A
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293
[4] STUDY OF ELECTRICAL AND CHEMICAL PROFILES OF SI IMPLANTED IN SEMI-INSULATING GAAS SUBSTRATE ANNEALED UNDER SIO2 AND CAPLESS
FENG, M
KWOK, SP
EU, V
HENDERSON, BW
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2990 - 2993
[5] GIBBONS JF, 1975, PROJECTED RANGE STAT
[6] HALLAIS J, 1977, I PHYS C SER B, V33, P220
[7] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[8] SUPPRESSION OF THERMAL-CONVERSION IN CR-DOPED SEMI-INSULATING GAAS
KASAHARA, J
ARAI, M
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8229 - 8231
[9] KIM HB, 1979, 7TH P BIENN CORN EL, P121
[10] THERMAL-CONVERSION OF GAAS
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NORDQUIST, PER
SIEBENMANN, PG
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4861 - 4869