SUPPRESSION OF THERMAL-CONVERSION IN CR-DOPED SEMI-INSULATING GAAS

被引：13

作者：

KASAHARA, J

ARAI, M

WATANABE, N

机构：

[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 12期

关键词：

D O I：

10.1063/1.325922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal conversion in the vicinity of the surface of a Cr-doped semi-insulating GaAs wafer to n-type conductivity was effectively suppressed by annealing the wafer under arsenic vapor pressure. For the ion implantation of Si into qualified wafers, the arsine-controlled capless-anneal method provided a uniform and reproducible carrier concentration profile which was in good agreement with that predicted by the LSS theory. The doping efficiency of 100% was attained without anomaly due to thermal conversion.

引用

页码：8229 / 8231

页数：3

共 6 条

[1] LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES
DONNELLY, JP
BOZLER, CO
LINDLEY, WT
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 273 - 276
[2] GIBBONS JF, 1975, PROJECTED RANGE STAT
[3] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION
HIGGINS, JA
KUVAS, RL
EISEN, FH
CHEN, DR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 587 - 596
[4] CAPLESS ANNEAL OF ION-IMPLANTED GAAS IN CONTROLLED ARSENIC VAPOR
KASAHARA, J
ARAI, M
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 541 - 543
[5] KASAHARA J, UNPUBLISHED
[6] MANDAL RP, 1978, 7TH P INT S GAAS REL

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