LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION

[1] BARRERA J, 1975, 5TH P BIENN CORN EL, P135

[2] CHEN DR, 1976 INT SOL STAT CI, P160

[3] COX HM, 1977, 6TH P INT S GAAS REL, P11

[4] EISEN FH, 1977, ION IMPLANTATION SEM

[5] GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] PERFORMANCE OF SULFUR-ION-IMPLANTED GAAS FETS [J]. ELECTRONICS LETTERS, 1976, 12 (01) : 17 - 18

[7] 2-DIMENSIONAL PARTICLE MODELS IN SEMICONDUCTOR-DEVICE ANALYSIS [J]. ELECTRONICS LETTERS, 1974, 10 (23) : 484 - 486

[8] HOOPER WW, 1977 TECH DIG INT EL, P601

[9] KELLNER W, 1976 TECH DIG INT EL, P238

[10] COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 95 - &

[1] BARRERA J, 1975, 5TH P BIENN CORN EL, P135

[2] CHEN DR, 1976 INT SOL STAT CI, P160

[3] COX HM, 1977, 6TH P INT S GAAS REL, P11

[4] EISEN FH, 1977, ION IMPLANTATION SEM

[5] GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] PERFORMANCE OF SULFUR-ION-IMPLANTED GAAS FETS [J]. ELECTRONICS LETTERS, 1976, 12 (01) : 17 - 18

[7] 2-DIMENSIONAL PARTICLE MODELS IN SEMICONDUCTOR-DEVICE ANALYSIS [J]. ELECTRONICS LETTERS, 1974, 10 (23) : 484 - 486

[8] HOOPER WW, 1977 TECH DIG INT EL, P601

[9] KELLNER W, 1976 TECH DIG INT EL, P238

[10] COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 95 - &