LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION

[11] GAAS FETS WITH SILICON-IMPLANTED CHANNELS [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 187 - 188

[12] LADD GO, 1977, 6TH P BIENN CORN EL, P369

[13] MIYAZAKI T, 1975, ION IMPLANTATION SEM, P41

[14] GAAS FIELD-EFFECT TRANSISTORS BY SELECTIVE SULFUR-ION IMPLANTATION [J]. ELECTRONICS LETTERS, 1976, 12 (17) : 431 - 432

[15] SUB-MICRON GATE GAAS MESFETS WITH ION-IMPLANTED CHANNELS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 111 - 114

[16] IMPROVED NOISE PERFORMANCE OF GAAS MESFETS WITH SELECTIVELY ION-IMPLANTED N+ SOURCE REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) : 1129 - 1130

[17] Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6

[18] STOLTE CA, 1975 TECH DIG INT EL, P585

[19] STONEHAM E, 1977 TECH FIG INT EL, P330

[20] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) : 485 - 496

[11] GAAS FETS WITH SILICON-IMPLANTED CHANNELS [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 187 - 188

[12] LADD GO, 1977, 6TH P BIENN CORN EL, P369

[13] MIYAZAKI T, 1975, ION IMPLANTATION SEM, P41

[14] GAAS FIELD-EFFECT TRANSISTORS BY SELECTIVE SULFUR-ION IMPLANTATION [J]. ELECTRONICS LETTERS, 1976, 12 (17) : 431 - 432

[15] SUB-MICRON GATE GAAS MESFETS WITH ION-IMPLANTED CHANNELS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 111 - 114

[16] IMPROVED NOISE PERFORMANCE OF GAAS MESFETS WITH SELECTIVELY ION-IMPLANTED N+ SOURCE REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) : 1129 - 1130

[17] Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6

[18] STOLTE CA, 1975 TECH DIG INT EL, P585

[19] STONEHAM E, 1977 TECH FIG INT EL, P330

[20] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) : 485 - 496