IMPROVED NOISE PERFORMANCE OF GAAS MESFETS WITH SELECTIVELY ION-IMPLANTED N+ SOURCE REGIONS

被引：20

作者：

OHATA, K ^{[1
]}

NOZAKI, T ^{[1
]}

KAWAMURA, N ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,KAWASAKI,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 08期

关键词：

D O I：

10.1109/T-ED.1977.18892

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1129 / 1130

页数：2

共 6 条

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[2] POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE [J].

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SUYAMA, K ;

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NAKAYAMA, Y ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :312-317

[3] LOW-NOISE GAAS MESFETS [J].

HEWITT, BS ;

COX, HM ;

FUKUI, H ;

DILORENZO, JV ;

SCHLOSSER, WO ;

IGLESIAS, DE .

ELECTRONICS LETTERS, 1976, 12 (12) :309-310

[4] EFFECT OF HEAT-TREATMENT OF GAAS ENCAPSULATED BY SIO-2 [J].

MOLNAR, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :767-768

[5] SUBMICRON SINGLE-GATE AND DUAL-GATE GAAS MESFETS WITH IMPROVED LOW-NOISE AND HIGH-GAIN PERFORMANCE [J].

OGAWA, M ;

OHATA, K ;

FURUTSUKA, T ;

KAWAMURA, N .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :300-305

[6]

PUCEL RA, 1976, IEEE J SOLID-ST CIRC, V11, P243, DOI 10.1109/JSSC.1976.1050711

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