SUBMICRON SINGLE-GATE AND DUAL-GATE GAAS MESFETS WITH IMPROVED LOW-NOISE AND HIGH-GAIN PERFORMANCE

被引：33

作者：

OGAWA, M ^{[1
]}

OHATA, K ^{[1
]}

FURUTSUKA, T ^{[1
]}

KAWAMURA, N ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1976年 / 24卷 / 06期

关键词：

D O I：

10.1109/TMTT.1976.1128846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：300 / 305

页数：6

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