PERFORMANCE OF DUAL-GATE GAAS MESFETS AS GAIN-CONTROLLED LOW-NOISE AMPLIFIERS AND HIGH-SPEED MODULATORS

被引：51

作者：

LIECHTI, CA ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,SOLID STATE LAB,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1975年 / MT23卷 / 06期

关键词：

D O I：

10.1109/TMTT.1975.1128602

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：461 / 469

页数：9

相关论文

共 32 条

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